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| Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification s q Features Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) 2.60.1 45 4.50.1 1.60.2 1.50.1 0.4max. q q 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 3 2 1 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * marking Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg * Ratings 100 80 5 1.5 1 1 150 -55 ~ +150 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package Marking symbol : P Internal Connection C B Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency (Ta=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE *1 E Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = IC = 1.0A, IB = 1A*2 IC = 1.0A, IB = 1.0mA*2 1.0mA*2 VCB = 10V, IE = -50mA, f = 200MHz min typ max 100 100 Unit nA nA V V V 100 80 5 4000 40000 1.8 2.2 150 *2 VCE(sat) VBE(sat) fT MHz Pulse measurement *1h FE Rank classification Rank hFE Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 PQ PR PS Marking Symbol 2.50.1 +0.25 V V 1 Transistor PC -- Ta 1.2 2.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 2.0 2SD1511 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C VCE(sat) -- IC IC/IB=1000 Collector power dissipation PC (W) 1.0 0.8 Collector current IC (A) 1.6 0.6 1.2 180A 160A 140A 120A 100A IB=200A 0.4 0.8 80A 60A 0.2 0.4 40A 0 0 40 80 120 160 200 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC 105 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V 30 IE=0 f=1MHz Ta=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 30 10 3 Ta=-25C 1 0.3 0.1 0.03 0.01 0.01 0.03 75C 25C Forward current transfer ratio hFE Ta=75C 25C 104 -25C 103 25 20 15 10 102 5 0.1 0.3 1 3 10 10 0.01 0.03 0 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 |
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